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dc.contributor.author D. G. en_US
dc.contributor.author A. C. en_US
dc.contributor.author Tudor en_US
dc.contributor.author D. A. en_US
dc.date.accessioned 2008-12-09T09:33:38Z
dc.date.available 2008-12-09T09:33:38Z
dc.date.issued 2006-04 en_US
dc.identifier http://dx.doi.org/10.1063/1.2180399 en_US
dc.identifier.citation Jones , D G , Brieva , A C , Jenkins , T & Evans , D A 2006 , ' Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry ' Journal of Applied Physics , vol 99 , no. 7 , pp. 73504 . , 10.1063/1.2180399 en_US
dc.identifier.other PURE: 89298 en_US
dc.identifier.other dspace: 2160/1462 en_US
dc.identifier.uri http://hdl.handle.net/2160/1462
dc.description.abstract The internal structure of copper(II)-phthalocyanine (CuPc) thin films grown on SiO2/Si by organic molecular beam deposition has been studied by grazing incidence x-ray reflectometry (GIXR) and atomic force microscopy. The electronic density profile is consistent with a structure formed by successive monolayers of molecules in the form with the b axis lying in the substrate surface plane. The authors present an electronic density profile model of CuPc films grown on SiO2/Si. The excellent agreement between the model and experimental data allows postdeposition monitoring of the internal structure of the CuPc films with the nondestructive GIXR technique, providing a tool for accurate control of CuPc growth on silicon-based substrates. In addition, since the experiments have been carried out ex situ, they show that these structures can endure ambient conditions. en_US
dc.format.extent 73504 en_US
dc.relation.ispartof Journal of Applied Physics en_US
dc.title Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry en_US
dc.contributor.pbl Institute of Biological, Environmental and Rural Sciences en_US
dc.contributor.pbl Institute of Mathematics & Physics (ADT) en_US
dc.contributor.pbl Mathematics and Physics en_US


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