Show simple item record Deb, Sudip K. Wilding, Martin C. Somayazulu, Maddury McMillan, Paul F. 2008-12-09T16:50:41Z 2008-12-09T16:50:41Z 2001-11-29
dc.identifier.citation Deb , S K , Wilding , M C , Somayazulu , M & McMillan , P F 2001 , ' Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon ' Nature , vol 414 , pp. 528-530 . DOI: 10.1038/35107036 en
dc.identifier.issn 1476-4687
dc.identifier.other PURE: 89657
dc.identifier.other PURE UUID: 13121924-e18a-4098-b08b-c7b24842fc52
dc.identifier.other dspace: 2160/1494
dc.identifier.other DSpace_20121128.csv: row: 1142
dc.identifier.other Scopus: 0035969544
dc.identifier.uri en
dc.description Deb, S. K., Wilding, M. C., Somayazulu, M., McMillan, P. F. (2001). Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon. Nature, 414, 528-530. RAE2008 en
dc.description.abstract Crystalline and amorphous forms of silicon are the principal materials used for solid-state electronics and photovoltaics technologies. Silicon is therefore a well-studied material, although new structures and properties are still being discovered1, 2, 3, 4. Compression of bulk silicon, which is tetrahedrally coordinated at atmospheric pressure, results in a transition to octahedrally coordinated metallic phases5. In compressed nanocrystalline Si particles, the initial diamond structure persists to higher pressure than for bulk material, before transforming to high-density crystals6. Here we report compression experiments on films of porous Si, which contains nanometre-sized domains of diamond-structured material7, 8, 9. At pressures larger than 10 GPa we observed pressure-induced amorphization10, 11. Furthermore, we find from Raman spectroscopy measurements that the high-density amorphous form obtained by this process transforms to low-density amorphous silicon upon decompression. This amorphous–amorphous transition is remarkably similar to that reported previously for water12, 13, which suggests an underlying transition between a high-density and a low-density liquid phase in supercooled Si (refs 10, 14, 15). The Si melting temperature decreases with increasing pressure, and the crystalline semiconductor melts to a metallic liquid with average coordination 5 (ref. 16). en
dc.format.extent 3 en
dc.language.iso eng
dc.relation.ispartof Nature en
dc.rights en
dc.title Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon en
dc.type /dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/article en
dc.contributor.institution Department of Physics en
dc.contributor.institution Materials Research en
dc.description.status Peer reviewed en

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