Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon

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dc.contributor.author Deb, Sudip K.
dc.contributor.author Wilding, Martin C.
dc.contributor.author Somayazulu, Maddury
dc.contributor.author McMillan, Paul F.
dc.date.accessioned 2008-12-09T16:50:41Z
dc.date.available 2008-12-09T16:50:41Z
dc.date.issued 2001-11-29
dc.identifier.citation Deb , S K , Wilding , M C , Somayazulu , M & McMillan , P F 2001 , ' Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon ' Nature , vol 414 , pp. 528-530 . en
dc.identifier.issn 1476-4687
dc.identifier.other PURE: 89657
dc.identifier.other dspace: 2160/1494
dc.identifier.uri http://hdl.handle.net/2160/1494
dc.identifier.uri http://www.nature.com/nature/journal/v414/n6863/abs/414528a.html en
dc.description Deb, S. K., Wilding, M. C., Somayazulu, M., McMillan, P. F. (2001). Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon. Nature, 414, 528-530. RAE2008 en
dc.description.abstract Crystalline and amorphous forms of silicon are the principal materials used for solid-state electronics and photovoltaics technologies. Silicon is therefore a well-studied material, although new structures and properties are still being discovered1, 2, 3, 4. Compression of bulk silicon, which is tetrahedrally coordinated at atmospheric pressure, results in a transition to octahedrally coordinated metallic phases5. In compressed nanocrystalline Si particles, the initial diamond structure persists to higher pressure than for bulk material, before transforming to high-density crystals6. Here we report compression experiments on films of porous Si, which contains nanometre-sized domains of diamond-structured material7, 8, 9. At pressures larger than 10 GPa we observed pressure-induced amorphization10, 11. Furthermore, we find from Raman spectroscopy measurements that the high-density amorphous form obtained by this process transforms to low-density amorphous silicon upon decompression. This amorphous–amorphous transition is remarkably similar to that reported previously for water12, 13, which suggests an underlying transition between a high-density and a low-density liquid phase in supercooled Si (refs 10, 14, 15). The Si melting temperature decreases with increasing pressure, and the crystalline semiconductor melts to a metallic liquid with average coordination 5 (ref. 16). en
dc.format.extent 3 en
dc.language.iso eng
dc.relation.ispartof Nature en
dc.title Pressure-induced amorphization and an amorphous-amorphous transition in densified porous silicon en
dc.type Text en
dc.type.publicationtype Article (Journal) en
dc.identifier.doi http://dx.doi.org/10.1038/35107036
dc.contributor.institution Institute of Mathematics & Physics (ADT) en
dc.contributor.institution Materials Research en
dc.description.status Peer reviewed en


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