Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC

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dc.contributor.author Noakes, T. C. Q.
dc.contributor.author Bailey, P.
dc.contributor.author Jenkins, Tudor
dc.contributor.author Hayton, D. J.
dc.date.accessioned 2008-12-10T09:01:20Z
dc.date.available 2008-12-10T09:01:20Z
dc.date.issued 2002-06
dc.identifier.citation Noakes , T C Q , Bailey , P , Jenkins , T & Hayton , D J 2002 , ' Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC ' Semiconductor Science and Technology , vol 17 , no. 7 , pp. L29-L32 . en
dc.identifier.issn 0268-1242
dc.identifier.other PURE: 89917
dc.identifier.other dspace: 2160/1499
dc.identifier.uri http://hdl.handle.net/2160/1499
dc.identifier.uri http://www.iop.org/EJ/abstract/0268-1242/17/7/101 en
dc.description Jenkins, Tudor; Hayton, D.J.; Bailey, P.; Noakes, T.C.Q., (2002) 'Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC', Semiconductor Science and Technology 17 pp.L29-L32 RAE2008 en
dc.description.abstract Medium energy ion scattering, Fourier transform infrared spectroscopy and spectroscopic ellipsometry measurements have been performed on thermally grown SiO2 layers on 4H silicon carbide. The data suggest the presence of a layer at the oxide–SiC interface consisting of both disordered Si and C. The infrared data indicate that the oxide layer is denser than fused silica. The thickness of the oxide layers as measured by spectroscopic ellipsometry agrees well with the values obtained from ion scattering. en
dc.language.iso eng
dc.relation.ispartof Semiconductor Science and Technology en
dc.title Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC en
dc.type Text en
dc.type.publicationtype Article (Journal) en
dc.identifier.doi http://dx.doi.org/10.1088/0268-1242/17/7/101
dc.contributor.institution Institute of Mathematics & Physics (ADT) en
dc.contributor.institution Mathematics and Physics en
dc.description.status Peer reviewed en


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