Show simple item record Noakes, T. C. Q. Bailey, P. Jenkins, Tudor Hayton, D. J. 2008-12-10T09:01:20Z 2008-12-10T09:01:20Z 2002-06
dc.identifier.citation Noakes , T C Q , Bailey , P , Jenkins , T & Hayton , D J 2002 , ' Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC ' Semiconductor Science and Technology , vol 17 , no. 7 , pp. L29-L32 . DOI: 10.1088/0268-1242/17/7/101 en
dc.identifier.issn 0268-1242
dc.identifier.other PURE: 89917
dc.identifier.other PURE UUID: 3ea67031-4d10-4619-a683-ae5a6f13deaf
dc.identifier.other dspace: 2160/1499
dc.identifier.other DSpace_20121128.csv: row: 1153
dc.identifier.other Scopus: 0036640790
dc.identifier.uri en
dc.description Jenkins, Tudor; Hayton, D.J.; Bailey, P.; Noakes, T.C.Q., (2002) 'Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC', Semiconductor Science and Technology 17 pp.L29-L32 RAE2008 en
dc.description.abstract Medium energy ion scattering, Fourier transform infrared spectroscopy and spectroscopic ellipsometry measurements have been performed on thermally grown SiO2 layers on 4H silicon carbide. The data suggest the presence of a layer at the oxide–SiC interface consisting of both disordered Si and C. The infrared data indicate that the oxide layer is denser than fused silica. The thickness of the oxide layers as measured by spectroscopic ellipsometry agrees well with the values obtained from ion scattering. en
dc.language.iso eng
dc.relation.ispartof Semiconductor Science and Technology en
dc.rights en
dc.title Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC en
dc.type /dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/article en
dc.contributor.institution Department of Physics en
dc.contributor.institution Mathematics and Physics en
dc.description.status Peer reviewed en

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