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dc.contributor.author Twitchen, Daniel
dc.contributor.author Roberts, Owain
dc.contributor.author Evans, Andrew
dc.contributor.author Schwitters, M.
dc.contributor.author Vearey-Roberts, Alex
dc.contributor.author Langstaff, David
dc.date.accessioned 2009-09-23T16:09:40Z
dc.date.available 2009-09-23T16:09:40Z
dc.date.issued 2009-09-23
dc.identifier.citation Twitchen , D , Roberts , O , Evans , A , Schwitters , M , Vearey-Roberts , A & Langstaff , D 2009 , ' Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy ' . en
dc.identifier.other PURE: 133380
dc.identifier.other dspace: 2160/3069
dc.identifier.uri http://hdl.handle.net/2160/3069
dc.description Evans D A, Roberts O R, Vearey-Roberts A R, Langstaff D P, Twitchen D J and Schwitters M 2007 Direct observation of Schottky to ohmic transition in Al-diamond contacts using realtime photoelectron spectroscopy Appl. Phys. Lett. 91 132114 doi:10.1063/1.2790779 en
dc.description.abstract Real-time photoelectron spectroscopy and in situ electrical measurements have been applied to the formation of Al contacts on p-type diamond. At 294 K, an initially uniform Al film induces band bending in the diamond consistent with the measured (current-voltage) barrier height of 1.05 V. The temperature-induced transition to an Ohmic contact has been monitored in real time revealing a direct correlation between the onset of surface bonding at 755 K and an abrupt change in surface band bending. The reaction temperature is lower than previously believed, and there is a second transition point at 1020 K where the rates of change of both reaction and band bending increase sharply. en
dc.language.iso eng
dc.title Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy en
dc.type Text en
dc.type.publicationtype Conference paper en
dc.contributor.institution Institute of Mathematics & Physics (ADT) en
dc.contributor.institution Department of Computer Science en
dc.description.status Non peer reviewed en


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