Show simple item record Evans, Andrew Vearey-Roberts, Alex Raymond 2007-09-05T12:47:09Z 2007-09-05T12:47:09Z 2005-02-10
dc.identifier.citation Evans , A & Vearey-Roberts , A R 2005 , ' Modification of GaAs Schottky diodes by thin organic interlayers ' Applied Physics Letters , vol 86 , no. 7 . DOI: 10.1063/1.1864255 en
dc.identifier.issn 1077-3118
dc.identifier.other PURE: 72349
dc.identifier.other PURE UUID: 30e7cc9f-6291-4188-b56f-4c0fdca4aba2
dc.identifier.other dspace: 2160/329
dc.identifier.other DSpace_20121128.csv: row: 254
dc.identifier.other Scopus: 17044391105
dc.identifier.uri en
dc.description Modification of GaAs Schottky diodes by thin organic interlayers, A.R. Vearey-Roberts and D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005) en
dc.description.abstract Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n en
dc.language.iso eng
dc.relation.ispartof Applied Physics Letters en
dc.rights en
dc.title Modification of GaAs Schottky diodes by thin organic interlayers en
dc.type /dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/article en
dc.contributor.institution Department of Computer Science en
dc.contributor.institution Department of Physics en
dc.description.status Peer reviewed en

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