Modification of GaAs Schottky diodes by thin organic interlayers

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dc.contributor.author Evans, Andrew
dc.contributor.author Vearey-Roberts, Alex R.
dc.date.accessioned 2007-09-05T12:47:09Z
dc.date.available 2007-09-05T12:47:09Z
dc.date.issued 2005-02-10
dc.identifier.citation Evans , A & Vearey-Roberts , A R 2005 , ' Modification of GaAs Schottky diodes by thin organic interlayers ' Applied Physics Letters , vol 86 , no. 7 . , 10.1063/1.1864255 en
dc.identifier.other PURE: 72349
dc.identifier.other dspace: 2160/329
dc.identifier.uri http://hdl.handle.net/2160/329
dc.identifier.uri http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000086000007072105000001&idtype=cvips en
dc.description Modification of GaAs Schottky diodes by thin organic interlayers, A.R. Vearey-Roberts and D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005) en
dc.description.abstract Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n en
dc.language.iso eng
dc.relation.ispartof Applied Physics Letters en
dc.title Modification of GaAs Schottky diodes by thin organic interlayers en
dc.type Text en
dc.type.publicationtype Article (Journal) en
dc.identifier.doi http://dx.doi.org/10.1063/1.1864255
dc.contributor.institution Department of Computer Science en
dc.contributor.institution Mathematics and Physics en
dc.description.status Peer reviewed en


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