Modification of GaAs Schottky diodes by thin organic interlayers

Home
→
Mathemateg a Ffiseg / Mathematics & Physics
→
Mathematics and Physics
→
View Item

dc.contributor.author	Evans, Andrew
dc.contributor.author	Vearey-Roberts, Alex R.
dc.date.accessioned	2007-09-05T12:47:09Z
dc.date.available	2007-09-05T12:47:09Z
dc.date.issued	2005-02-10
dc.identifier.citation	Evans , A & Vearey-Roberts , A R 2005 , ' Modification of GaAs Schottky diodes by thin organic interlayers ' Applied Physics Letters , vol 86 , no. 7 .	en
dc.identifier.other	PURE: 72349
dc.identifier.other	dspace: 2160/329
dc.identifier.uri	http://hdl.handle.net/2160/329
dc.identifier.uri	http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000086000007072105000001&idtype=cvips	en
dc.description	Modification of GaAs Schottky diodes by thin organic interlayers, A.R. Vearey-Roberts and D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005)	en
dc.description.abstract	Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n	en
dc.language.iso	eng
dc.relation.ispartof	Applied Physics Letters	en
dc.title	Modification of GaAs Schottky diodes by thin organic interlayers	en
dc.type	Text	en
dc.type.publicationtype	Article (Journal)	en
dc.identifier.doi	http://dx.doi.org/10.1063/1.1864255
dc.contributor.institution	Department of Computer Science	en
dc.contributor.institution	Mathematics and Physics	en
dc.description.status	Peer reviewed	en