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dc.contributor.author Andrew en_US
dc.contributor.author Alex R. en_US
dc.date.accessioned 2007-09-05T12:47:09Z
dc.date.available 2007-09-05T12:47:09Z
dc.date.issued 2005-02-10 en_US
dc.identifier http://dx.doi.org/10.1063/1.1864255 en_US
dc.identifier.citation Evans , A & Vearey-Roberts , A R 2005 , ' Modification of GaAs Schottky diodes by thin organic interlayers ' Applied Physics Letters , vol 86 , no. 7 . , 10.1063/1.1864255 en_US
dc.identifier.other PURE: 72349 en_US
dc.identifier.other dspace: 2160/329 en_US
dc.identifier.uri http://hdl.handle.net/2160/329
dc.description.abstract Control of the interfacial potential barrier for metal/n-GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The I-V characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n en_US
dc.relation.ispartof Applied Physics Letters en_US
dc.title Modification of GaAs Schottky diodes by thin organic interlayers en_US
dc.contributor.pbl Department of Computer Science en_US
dc.contributor.pbl Mathematics and Physics en_US


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