Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy

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dc.contributor.author	Evans, David Andrew
dc.contributor.author	Roberts, Owain Rhys
dc.contributor.author	Vearey-Roberts, Alex Raymond
dc.contributor.author	Langstaff, David Philip
dc.contributor.author	Twitchen, Daniel
dc.contributor.author	Schwitters, M.
dc.date.accessioned	2007-10-02T10:36:04Z
dc.date.available	2007-10-02T10:36:04Z
dc.date.issued	2007-09-23
dc.identifier.citation	Evans , D A , Roberts , O R , Vearey-Roberts , A R , Langstaff , D P , Twitchen , D & Schwitters , M 2007 , ' Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy ' Applied Physics Letters , vol 91 , 132114 . DOI: 10.1063/1.2790779	en
dc.identifier.issn	0003-6951
dc.identifier.other	PURE: 72440
dc.identifier.other	PURE UUID: c6c53ed8-170f-467c-b7f2-b3214b297061
dc.identifier.other	dspace: 2160/334
dc.identifier.other	DSpace_20121128.csv: row: 257
dc.identifier.other	dspace: 2160/3069
dc.identifier.other	Scopus: 34848908617
dc.identifier.uri	http://hdl.handle.net/2160/334
dc.description	Evans D A, Roberts O R, Vearey-Roberts A R, Langstaff D P, Twitchen D J and Schwitters M 2007 Direct observation of Schottky to ohmic transition in Al-diamond contacts using realtime photoelectron spectroscopy Appl. Phys. Lett. 91 132114 doi:10.1063/1.2790779	en
dc.description.abstract	Real-time photoelectron spectroscopy and in situ electrical measurements have been applied to the formation of Al contacts on p-type diamond. At 294 K, an initially uniform Al film induces band bending in the diamond consistent with the measured (current-voltage) barrier height of 1.05 V. The temperature-induced transition to an Ohmic contact has been monitored in real time revealing a direct correlation between the onset of surface bonding at 755 K and an abrupt change in surface band bending. The reaction temperature is lower than previously believed, and there is a second transition point at 1020 K where the rates of change of both reaction and band bending increase sharply.	en
dc.language.iso	eng
dc.relation.ispartof	Applied Physics Letters	en
dc.rights		en
dc.title	Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy	en
dc.type	/dk/atira/pure/researchoutput/researchoutputtypes/contributiontojournal/article	en
dc.description.version	authorsversion	en
dc.identifier.doi	http://dx.doi.org/10.1063/1.2790779
dc.contributor.institution	Department of Physics	en
dc.description.status	Peer reviewed	en

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