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dc.contributor.author David Andrew en_US
dc.contributor.author Owain Rhys en_US
dc.contributor.author Alex en_US
dc.contributor.author David Philip en_US
dc.contributor.author Daniel en_US
dc.contributor.author M. en_US
dc.date.accessioned 2007-10-02T10:36:04Z
dc.date.available 2007-10-02T10:36:04Z
dc.date.issued 2007-09-23 en_US
dc.identifier http://dx.doi.org/10.1063/1.2790779 en_US
dc.identifier.citation Evans , D A , Roberts , O R , Vearey-Roberts , A , Langstaff , D P , Twitchen , D & Schwitters , M 2007 , ' Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy ' Applied Physics Letters , vol 91 , 132114 . , 10.1063/1.2790779 en_US
dc.identifier.other PURE: 72440 en_US
dc.identifier.other dspace: 2160/334 en_US
dc.identifier.uri http://hdl.handle.net/2160/334
dc.description.abstract Real-time photoelectron spectroscopy and in situ electrical measurements have been applied to the formation of Al contacts on p-type diamond. At 294 K, an initially uniform Al film induces band bending in the diamond consistent with the measured (current-voltage) barrier height of 1.05 V. The temperature-induced transition to an Ohmic contact has been monitored in real time revealing a direct correlation between the onset of surface bonding at 755 K and an abrupt change in surface band bending. The reaction temperature is lower than previously believed, and there is a second transition point at 1020 K where the rates of change of both reaction and band bending increase sharply. en_US
dc.relation.ispartof Applied Physics Letters en_US
dc.title Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy en_US
dc.contributor.pbl Institute of Mathematics & Physics (ADT) en_US


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